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RURU50100
Data Sheet January 2000 File Number 3376.3
50A, 1000V Ultrafast Diode
The RURU50100 is an ultrafast diode with soft recovery characteristics (trr < 125ns). It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimize ringing and electrical noise in many power switching circuits, reducing power loss in the switching transistors. Formerly developmental type TA09910.
Features
* Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . <125ns * Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V * Avalanche Energy Rated * Planar Construction
Applications
* Switching Power Supplies * Power Switching Circuits * General Purpose
Ordering Information
PART NUMBER RURU50100 PACKAGE TO-218 BRAND RURU50100
Packaging
JEDEC STYLE SINGLE LEAD TO-218
ANODE
NOTE: When ordering, use the entire part number.
Symbol
K
CATHODE (FLANGE)
A
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified RURU50100 UNITS V V V A A A W mJ
oC
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 90oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
1000 1000 1000 50 100 500 150 40 -65 to 175
1
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(c) Intersil Corporation 2000
RURU50100
Electrical Specifications
SYMBOL VF IF = 50A IF = 50A, TC = 150oC IR VR = 1000V VR = 1000V, TC = 150oC trr IF = 1A, dIF/dt = 100A/s IF = 50A, dIF/dt = 100A/s ta tb RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 6), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 6). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6). RJC = Thermal resistance junction to case. pw = pulse width. D = duty cycle. IF = 50A, dIF/dt = 100A/s IF = 50A, dIF/dt = 100A/s TC = 25oC, Unless Otherwise Specified TEST CONDITION MIN TYP 110 65 MAX 1.9 1.7 250 1.5 125 200 1.0 UNITS V V A mA ns ns ns ns
oC/W
Typical Performance Curves
300 1000 175oC
IF, FORWARD CURRENT (A)
100
IR, REVERSE CURRENT (A)
100
10 100oC 1.0
175oC 10 100oC 25oC
0.1 25oC
1 0 0.5 1.0 1.5 2.0 2.5 3.0 VF, FORWARD VOLTAGE (V)
0.01 0
200
400
600
800
1000
VR, REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2
RURU50100 Typical Performance Curves
200 175 150 t, TIME (ns) 125 100 75 tb 50 25 0 1 10 IF, FORWARD CURRENT (A) 50 ta trr
(Continued)
IF(AV), AVERAGE FORWARD CURRENT (A)
60 50 DC 40 SQ. WAVE 30 20 10 0 25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT
FIGURE 4. CURRENT DERATING CURVE
Test Circuits and Waveforms
VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF
L
DUT RG VGE t1 t2
CURRENT SENSE + VDD 0
IF
dIF dt ta
trr tb
IGBT
-
0.25 IRM IRM
FIGURE 5. trr TEST CIRCUIT
I = 1.4A L = 40mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD IV
FIGURE 6. trr WAVEFORMS AND DEFINITIONS
VAVL
IL
IL
t0 t1 t2 t
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com 3

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